infrared led chip gaas/gaa s 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics v f(1) 1.3 v if=20ma v f(2) 1.57 v if=100ma reverse voltag e v r 8 v ir=10ua power p o 8 11 mw if=100ma p 940 nm if=20ma ? 45 nm if=20ma note : power is measured by sorter e/t system with bare chip. 4. mechanical data (a) emission area -------------------- - 10.5mil x 10.5mil (b) bottom area -------------------- - 11.5mil x 11.5mil (c) bonding pad -------------------- - 130um (d) chip thickness -------------------- - 7mil (e) junction height -------------------- - 4.7mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA9433LT forward voltag e wavelength auk corp. (c) (a) (b) (e) (d) substrate
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